栅电压，触发电压
gate───vt.给…装大门；n.(Gate)人名；(英)盖特；(法、瑞典)加特；n.大门；出入口；门道
voltage limit───电压极限
input voltage───[电]输入电压；工作电压
voltage measurement───[电]电压测量
voltage source───n.电压电源
voltage regulation───稳压；[电]电压调整；[电]电压变动率；电压变动率，电压调整，稳压
doubler voltage───倍增电压
voltage difference───[电]电压差
voltage rating───[电]额定电压
Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.───的发光强度有所提高，但栅压对载流子的控制作用不理想。
The applied gate voltage gives rise to negative differential resistance (NDR).───通过直流栅电压的作用室温时产生负电阻效应。
high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.───控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.───器件的发光强度有所提高，但栅压对载流子的控制作用不理想。
The emission current density at the apex was found to be the highest, depending exponentially on the gate voltage.───电流密度在纳米线顶端边缘处最大，而且随着栅极电压的增加而呈指数增加。
Slowly-drop gate voltage and softly turn-off principles are explained in this article, specific parameters are also listed.───阐述了软降栅压和软关断的过电流保护原理，列出具体的保护时序参数。
Erasing the memory devices can include applying a gate voltage to the wordlines and applying a bias voltage to the dummy wordlines.───存储装置的擦除可包含：施加栅极电压至字线且施加偏压至虚拟字线。
The appropriate spectrum for 6 A peak drain-current, 13 V gate voltage and 380 V drain-source voltage has been chosen as reference.───为在峰值6安培漏极电流下获得适当的频谱，选择13伏特的栅源极电压和380伏特的漏源极电压为参考。
Fig. 13 shows that a change of the gate voltage from 10V to 15V hardly influences the spectrum.───图13展示出栅源极电压从10伏特到15伏特变化几乎不对干扰频谱产生影响。
Slowly-drop gate voltage and softly turn-off principles are explained in this article, specific parameters are also listed.
The gate voltage, at which the barrier height has its maximum, just corresponds to the threshold voltage of a MOS structure with zero electro-de gap.
It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function.
The acoustoelectric current also reveals Coulomb Blockade as a function of split gate voltage when microwave signal with the resonance frequency is coupled to DDT.