金属有机物
metalogical───元逻辑的
MOCVD stands for Metalorganic Chemical Vapor Deposition, is one technology used to grow wafers from underlay with the MOCVD equipment.───MOCVD是金属有机化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor───采用二甲基肼为氮源进行GaNAs的金属有机化学气相沉积生长
Numerical Simulation and Analysis of Flow Field in Low Pressure Metalorganic Chemical Vapour Deposition Reactor───低压金属有机化学气相外延生长室热流场的模拟与分析
Thermally-induced Third-order Optical Nonlinearity of Several Novel Metalorganic Compounds───几种新型金属配合物热致三阶非线性光学特性
Focused Ion Beam Induced Metalorganic Chemical Vapor Deposition of C-Pt Thin Film───聚焦离子束诱发金属有机化学气相淀积碳-铂薄膜
MOCVD stands for Metalorganic Chemical Vapor Deposition, is one technology used to grow wafers from underlay with the MOCVD equipment.